4.6 Article

Soft-solution route to ZnO nanowall array with low threshold power density

Journal

APPLIED PHYSICS LETTERS
Volume 97, Issue 4, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.3466910

Keywords

buffer layers; II-VI semiconductors; nanofabrication; nanostructured materials; semiconductor growth; stimulated emission; wide band gap semiconductors; zinc compounds

Funding

  1. Ministry of Science and Technology, Korea Research Foundation (KRF)
  2. Ministry of Education, Korea Research Foundation (KRF)
  3. Department of Radiology, Stanford University
  4. SRC [R11-2007-012-01002-0]

Ask authors/readers for more resources

ZnO nanowall array (ZNWA) has been directionally grown on the buffer layer of ZnO nanoparticles dip-coated on Si-wafer under a soft solution process. Nanowalls on substrate are in most suitable shape and orientation not only as an optical trap but also as an optical waveguide due to their unique growth habit, V-[01 (1) over bar0]>> V-[0001]approximate to V-[000 (1) over bar]. Consequently, the stimulated emission at 384 nm through nanowalls is generated by the threshold power density of only 25 kW/cm(2). Such UV lasing properties are superior to those of previously reported ZnO nanorod arrays. Moreover, there is no green (defect) emission due to the mild procedure to synthesize ZNWA. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3466910]

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.6
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available