Journal
APPLIED PHYSICS LETTERS
Volume 97, Issue 19, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3501967
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Funding
- National Natural Science Foundation of China [10804048]
- State Key Programs for Basic Research of China [2010CB630704, 2006CB921803]
- National Key Project [2009ZX02023-5-4]
- 863 Project of China [2008AA031401]
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Well-developed bipolar resistive switching behaviors have been revealed in Pt/GaOx/ITO stacks without an electroforming process. By substituting platinum with titanium as the top electrode, switching polarity changed from counter-Figure-8 to Figure-8. The modulation of Schottky barrier at the Pt/GaOx interface induced by migration of oxygen vacancies was proposed to explain the switching in Pt/GaOx/ITO stacks, while the switching in Ti/GaOx/ITO stacks was ascribed to the redox reaction at the Ti/GaOx interface. Our experimental result further confirms the migration of oxygen vacancies in the vicinity of the electrode area plays an important role in the resistive switching process. (C) 2010 American Institute of Physics. [doi:10.1063/1.3501967]
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