Coevaporation of Cu2ZnSnSe4 thin films

Cu2ZnSnSe4 thin films grown by coevaporation are investigated in a wide temperature range and for different Se partial pressures during growth. At temperatures higher than 350 degrees C Sn is re-evaporating as SnSe from the surface whereas Zn is lost at temperatures higher than 430 degrees C. Moreover the Se partial pressure dramatically changes the Zn and Sn concentrations in the resulting film. Interrupted processes at 380 degrees C show that single-stage coevaporation intrinsically induces a secondary phase at the substrate/film interface. (C) 2010 American Institute of Physics. [doi:10.1063/1.3483760]