Journal
APPLIED PHYSICS LETTERS
Volume 96, Issue 12, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3353971
Keywords
acoustoelectric effects; aluminium compounds; gallium compounds; III-V semiconductors; surface acoustic wave delay lines; two-dimensional electron gas; wide band gap semiconductors
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Funding
- Spanish Ministerio de Educacion y Ciencia [TEC2007-67065]
- Programa Nacional de Movilidad de Recursos Humanos [I+D+i 2008-2011]
- Spanish Ministerio de Ciencia e Innovacion
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A voltage tunable surface acoustic wave (SAW) phase shifter on a two-dimensional electron gas (2DEG) AlGaN/GaN heterostructure has been developed. The acoustoelectric interaction is field-effect modulated by means of an insulated gate placed in the acoustic path of a SAW delay line. The phase velocity under the gate is tuned by modifying the conductance of the 2DEG with a dc bias, while the insulating layer prevents the screening of the SAW piezoelectric fields by the gate. The device is compatible with the nitride transistor technology for signal processing and frequency control applications.
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