Journal
APPLIED PHYSICS LETTERS
Volume 97, Issue 19, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3509416
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- NSF
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The surface kinetics of InGaN alloys grown via metal-modulated epitaxy (MME) are explored in combination with transient reflection high-energy electron diffraction intensities. A method for monitoring and controlling indium segregation in situ is demonstrated. It is found that indium segregation is more accurately associated with the quantity of excess adsorbed metal, rather than the metal-rich growth regime in general. A modified form of MME is developed in which the excess metal dose is managed via shuttered growth, and high-quality InGaN films throughout the miscibility gap are grown. (C) 2010 American Institute of Physics. [doi:10.1063/1.3509416]
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