Electron transport in rubrene single-crystal transistors

We report a study of impurity effects on the electron transport of rubrene single crystals. A significant improvement of electron carrier mobility up to 0.81 cm(2)/V s is achieved by performing multiple purifications of single crystals and device aging inside an N-2-filled glove box. The hole/electron mobility ratio obtained is in good agreement with the reported theoretical calculation, suggesting that the intrinsic electron transport of organic semiconductors is also exploitable in a manner similar to that of hole transport. (C) 2010 American Institute of Physics. [doi:10.1063/1.3419899]