Journal
APPLIED PHYSICS LETTERS
Volume 96, Issue 22, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3442903
Keywords
chemical vapour deposition; epitaxial layers; graphene; island structure; nucleation
Categories
Funding
- American Society for Engineering Education
- Naval Research Enterprise Intern Program
- Office of Naval Research
Ask authors/readers for more resources
Epitaxial graphene layers were grown on the C-face of 4H-SiC and 6H-SiC using an argon-mediated growth process. Variations in growth temperature and pressure were found to dramatically affect the morphological properties of the layers. The presence of argon during growth slowed the rate of graphene formation on the C-face and led to the observation of islanding. The similarity in the morphology of the islands and continuous films indicated that island nucleation and coalescence is the growth mechanism for C-face graphene. (C) 2010 American Institute of Physics. [doi:10.1063/1.3442903]
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available