Journal
APPLIED PHYSICS LETTERS
Volume 96, Issue 21, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3435484
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Funding
- Ministry of Education, Science and Technology [2009-0081961, R31-2008-000-10075-0]
- National Research Foundation of Korea [2010-50170, R31-2008-000-10075-0] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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The polarization reversal behavior of Pt/Pb(Zr,Ti)O-3/Pt and Pt/Al2O3/Pb(Zr,Ti)O-3/Pt capacitors was examined according to the reversal direction using transient switching current measurements. The changes in switching resistance according to the polarization reversal direction suggests that during reversal from the upward to downward polarization, nucleation of a reversed domain occurs at the top interface, whereas nucleation occurs at the bottom interface in the opposite case. The extremely high activation energy for the nucleation of a reversed domain can be reduced considerably by electron injection from the by-electrode but not by hole injection. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3435484]
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