Journal
APPLIED PHYSICS LETTERS
Volume 97, Issue 24, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3527922
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Funding
- HK PolyU [1-ZV6X]
- SUTD [SRG EPD 2010-003]
- Loreal Singapore for Women in Science National fellowship
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An array of highly disordered i-ZnO:Al(3%) random cavities, which have 1 mu m width, 150 nm thickness, and 2 mm length, is sandwiched between n-ZnO:Al(5%) and p-GaN/sapphire substrate to form an array of heterojunctions. The random cavities, which are electrically isolated and optically coupled with the adjacent random cavities, are laterally separated by a 1 mu m wide Al2O3 dielectric insulator. Stable single-mode operation is observed from the laser diode array under high electrical pumping (i.e., >6 x threshold current) at room temperature. (C) 2010 American Institute of Physics. [doi:10.1063/1.3527922]
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