Journal
APPLIED PHYSICS LETTERS
Volume 97, Issue 26, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3532970
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Funding
- 973 Program
- 863 Program
- NSFC
- China Postdoctoral Science Foundation [2010CB934200, 2008AA031401, 61006009, 20090460135]
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A resistive switching device based on the stacked alpha-Fe2O3/Nb-SrTiO3 is proposed and fabricated that demonstrates excellent bipolar resistive switching behaviors including the uniformity, endurance, and retention performance. The Schottky-like current-voltage characteristics correlated with set process were observed in both high resistive states (HRSs) and low resistive states (LRSs) of the device. Importantly, the anticrosstalk characteristic, possessing higher reversed-biased LRS resistance than the forwarded-biased HRS resistance, indicates the potential applications of the stacked alpha-Fe2O3/Nb-SrTiO3 for multilevel storage in the cross-bar memory arrays. The carrier injection and trapping mechanism is suggested to explain the observed phenomena. (C) 2010 American Institute of Physics. [doi:10.1063/1.3532970]
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