Journal
APPLIED PHYSICS LETTERS
Volume 97, Issue 24, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3522651
Keywords
-
Categories
Funding
- EPSRC [EP/H017720/1]
- EPSRC [EP/H017720/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [EP/H017720/1] Funding Source: researchfish
Ask authors/readers for more resources
We have developed a method of fabricating very shallow, gateable, undoped two-dimensional electron gases (2DEG) and making very low resistivity contacts to these. We studied the evolution of mobility as a function of the depth of the 2DEG (from 310 to 30 nm). We extract quantitative information about the background impurity concentrations in GaAs and AlGaAs, the interface roughness, and the charge in the surface states. Surface charge sets an intrinsic limit to the mobility of very shallow 2DEGs. It is probably impossible to fabricate such shallow high-mobility 2DEGs using modulation doping due to the need to accommodate a spacer layer. (C) 2010 American Institute of Physics. [doi:10.1063/1.3522651]
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available