Synthesis and fabrication of high-performance n-type silicon nanowire transistors

Single crystal n-type silicon nanowires (SiNWs) with controlled phosphorus dopant concentrations have been successfully synthesized for the first time (see Figure). Field-effect transistor (FET) devices fabricated from these n-SiNWs exhibit good device properties, with mobilities more than 100 times greater than previous reports, and comparable to high-performance planar silicon FETs.