Related references
Note: Only part of the references are listed.Impact of Uniaxial Strain on Low-Frequency Noise in Nanoscale PMOSFETs
Jack J. -Y. Kuo et al.
IEEE ELECTRON DEVICE LETTERS (2009)
What Do We Certainly Know About 1/f Noise in MOSTs?
Lode K. J. Vandamme et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2008)
Influence of the Ge concentration in the virtual substrate on the low frequency noise in strained-Si surface n-channel metal-oxide-semiconductor field-effect transistors
Kristel Fobelets et al.
JOURNAL OF APPLIED PHYSICS (2008)
Method for managing the stress due to the strained nitride capping layer in MOS transistors
Stephane Orain et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2007)
Low-frequency noise characteristics in strained-Si nMOSFETs
Yen Ping Wang et al.
IEEE ELECTRON DEVICE LETTERS (2007)
Channel-width dependence of low-frequency noise in process tensile-strained n-channel metal-oxide-semiconductor transistors
MP Lu et al.
APPLIED PHYSICS LETTERS (2006)
Enhanced CMOS performances using substrate strained-SiGe and mechanical strained-Si technology
SL Wu et al.
IEEE ELECTRON DEVICE LETTERS (2006)
Threading dislocation induced low frequency noise in strained-Si nMOSFETs
WC Hua et al.
IEEE ELECTRON DEVICE LETTERS (2005)
Lattice strain analysis of transistor structures with silicon-germanium and silicon-carbon source/drain stressors
KW Ang et al.
APPLIED PHYSICS LETTERS (2005)
Low-frequency noise in Si0.7Ge0.3 surface channel pMOSFETs with ALD HfO2/Al2O3 gate dielectrics
M von Haartman et al.
SOLID-STATE ELECTRONICS (2004)
Electrical noise and RTS fluctuations in advanced CMOS devices
G Ghibaudo et al.
MICROELECTRONICS RELIABILITY (2002)
1/f noise in CMOS transistors for analog applications
Y Nemirovsky et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2001)
Share Paper
