Journal
APPLIED PHYSICS LETTERS
Volume 85, Issue 19, Pages 4281-4283Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1815043
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InxGa1-xN quantum dots have been fabricated by the selective growth of GaN micropyramid arrays topped with InGaN/GaN quantum wells. The spatially, spectrally, and time-resolved emission properties of these structures were measured using cathodoluminescence hyperspectral imaging and low-temperature microphotoluminescence spectroscopy. The presence of InGaN quantum dots was confirmed directly by the observation of sharp peaks in the emission spectrum at the pyramid apices. These luminescence peaks exhibit decay lifetimes of approximately 0.5 ns, with linewidths down to 650 mueV (limited by the spectrometer resolution). (C) 2004 American Institute of Physics.
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