Journal
APPLIED PHYSICS LETTERS
Volume 85, Issue 19, Pages 4334-4336Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1818733
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The band-edge excitonic properties of AlN are investigated using low-temperature (1.7 K) optical reflectance and transmission measurements of samples with various crystal orientations. The A, B, and C excitons are found to have energies of 6.025, 6.243, and 6.257 eV in unstrained material, which shift with strain. The results are compared to a calculation of exciton energies and oscillator strengths to yield a crystal-field splitting of -230 meV in unstrained AlN, in good agreement with previous ab initio calculations. (C) 2004 American Institute of Physics.
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