Journal
APPLIED PHYSICS LETTERS
Volume 97, Issue 12, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3491807
Keywords
insulated gate field effect transistors; organic compounds; organic field effect transistors; silicon compounds; thin film transistors
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Funding
- Ministry of Education, Culture, Sports, Science, and Technology (MEXT)
- Japan Society for the Promotion of Science (JSPS)
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Dual-gate organic thin-film transistors (OTFTs) of octathio[8]circulene (1) with ionic liquid and SiO2 gate dielectrics lead to good transistor performance with a high on/off ratio (similar to 10(5)), a low threshold voltage (similar to-5 V), a low subthreshold slope (similar to 150 mV/decade), and low power operation, thus surpassing the performance of the single-gate OTFTs of 1. This operation is a promising method for improving the carrier concentrations in OTFTs and for realizing high-performance OTFTs. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3491807]
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