4.6 Article

Size-dependent strain effects on electronic and optical properties of ZnO nanowires

Journal

APPLIED PHYSICS LETTERS
Volume 97, Issue 3, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.3464974

Keywords

ab initio calculations; dielectric function; energy gap; II-VI semiconductors; nanowires; red shift; semiconductor quantum wires; wide band gap semiconductors

Funding

  1. National Natural Science Foundation of China [10874089]
  2. Natural Science Foundation of Jiangsu Province [BK2008398]
  3. Project Innovation of Graduate Students of Jiangsu Province, China [CX08B_006Z]

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The electronic and optical properties of ZnO nanowires under uniaxial strain are investigated using first-principles calculations. The results show that the electronic band gap for the ultrathin ZnO nanowires displays a nonmonotonic relationship with the strain, while the gap is inversely proportional to strain and shows a linear relationship for the nanowires with diameter larger than 2.4 nm. Optical properties calculations show that the dielectric function peaks for ultrathin nanowires display a redshift with decreasing uniaxial strain, this energy shift decreases with increasing diameter and vanishes as the diameter increases to 2.4 nm. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3464974]

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