Journal
APPLIED PHYSICS LETTERS
Volume 97, Issue 4, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3464956
Keywords
gallium compounds; III-V semiconductors; mass spectroscopy; molecular beam epitaxial growth; nanofabrication; nanowires; nitridation; nucleation; reflection high energy electron diffraction; semiconductor growth; semiconductor quantum wires; transmission electron microscopy; wide band gap semiconductors
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Funding
- EU through the IST [015783]
- Marie Curie RTN PARSEM [MRTN-CT-2004-005583]
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The nucleation of GaN nanowires grown by molecular beam epitaxy on bare Si(111) and Si(001) has been investigated in situ by reflection high-energy electron diffraction (RHEED) and line-of-sight quadrupole mass spectrometry. On either substrate, the incorporation rate of Ga increases in two steps to steady-state conditions, and the RHEED transmission pattern of GaN appears only in the second stage. Ex situ transmission electron microscopy on samples from both stages grown on Si(001) revealed that the nanowire nucleation is strongly affected by the simultaneous nitridation of the Si substrate. (C) 2010 American Institute of Physics. [doi:10.1063/1.3464956]
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