Related references
Note: Only part of the references are listed.Nonlinear stability of E centers in Si1-xGex: Electronic structure calculations
A. Chroneos et al.
PHYSICAL REVIEW B (2008)
Hydrogen in Si(100)-SiO2-HfO2 gate stacks:: Relevant charge states and their location
Julien Godet et al.
APPLIED PHYSICS LETTERS (2007)
Hydrogen-related instabilities in MOS devices under bias temperature stress
Leonidas Tsetseris et al.
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY (2007)
Hydrogen effects in MOS devices
L. Tsetseris et al.
MICROELECTRONIC ENGINEERING (2007)
Effects of device aging on microelectronics radiation response and reliability
D. M. Fleetwood et al.
MICROELECTRONICS RELIABILITY (2007)
Hydrogen in MOSFETs - A primary agent of reliability issues
Sokrates T. Pantelides et al.
MICROELECTRONICS RELIABILITY (2007)
Hydrogen self-trapping near silicon atoms in Ge-rich SiGe alloys
RN Pereira et al.
APPLIED PHYSICS LETTERS (2006)
Common origin for enhanced low-dose-rate sensitivity and bias temperature instability under negative bias
L Tsetseris et al.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2005)
Vibrational properties of elemental hydrogen centres in Si, Ge and dilute SiGe alloys
A Balsas et al.
JOURNAL OF PHYSICS-CONDENSED MATTER (2005)
Local modes of bond-centered hydrogen in Si:Ge and Ge:Si -: art. no. 195201
RN Pereira et al.
PHYSICAL REVIEW B (2005)
Physical mechanisms of negative-bias temperature instability
L Tsetseris et al.
APPLIED PHYSICS LETTERS (2005)
Dual role of fluorine at the Si-SiO2 interface
L Tsetseris et al.
APPLIED PHYSICS LETTERS (2004)
Bond-center hydrogen in dilute Si1-xGex alloys:: Laplace deep-level transient spectroscopy -: art. no. 045204
KB Nielsen et al.
PHYSICAL REVIEW B (2003)
Share Paper
