Journal
APPLIED PHYSICS LETTERS
Volume 96, Issue 4, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3292022
Keywords
copper; electrical resistivity; electron backscattering; electron beam lithography; electron diffraction; electron mean free path; grain boundaries; interconnections; masks; nanolithography; nanowires; surface roughness; surface scattering
Categories
Funding
- Office of Science
- Office of Basic Energy Sciences
- U.S. Department of Energy [DE-AC02-05CH11231]
- NIST [2004-012]
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Electron scattering mechanisms in copper lines were investigated to understand the extendibility of copper interconnects when linewidth or thickness is less than the mean free path. Electron-beam lithography and a dual hard mask were used to produce interconnects with linewidths between 25 and 45 nm. Electron backscatter diffraction characterized grain structure. Temperature dependence of the line resistance determined resistivity, which was consistent with existing models for completely diffused surface scattering and line-edge roughness, with little contribution from grain boundary scattering. A simple analytical model was developed that describes resistivity from diffuse surface scattering and line-edge roughness.
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