3.8 Article

18.5% copper indium gallium diselenide (CIGS) device using single-layer, chemical-bath-deposited ZnS(O,OH)

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Publisher

INST PURE APPLIED PHYSICS
DOI: 10.1143/JJAP.43.L1475

Keywords

copper indium gallium diselenide (CIGS); chemical bath deposition (CBD); ZnS(O,OH)

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The recent development of a chemical-bath-deposited (CBD) ZnS(O,OH) layer that enabled an 18.5%-efficient copper indium gallium diselenide (CIGS) devices using a single-layer of CBD ZnS(O,OH) is reported in this paper. Such buffer layers could potentially replace US in the CIGS solar cell.

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