Journal
APPLIED PHYSICS LETTERS
Volume 96, Issue 18, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3425892
Keywords
effective mass; elemental semiconductors; Ge-Si alloys; semiconductor heterojunctions; semiconductor quantum dots; silicon; tunnelling
Categories
Funding
- ARO
- LPS [W911NF-08-1-0482]
- NSF [DMR-0805045]
- United States Department of Defense
- DOE [DE-FG02-03ER46028]
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [832760] Funding Source: National Science Foundation
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We report the fabrication and measurement of one-electron single and double quantum dots with fast tunnel rates in a Si/SiGe heterostructure. Achieving fast tunnel rates in few-electron dots can be challenging, in part due to the large electron effective mass in Si. Using charge sensing, we identify signatures of tunnel rates in and out of the dot that are fast or slow compared to the measurement rate. Such signatures provide a means to calibrate the absolute electron number and verify single electron occupation. Pulsed gate voltage measurements are used to validate the approach. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3425892]
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