4.6 Article

Shubnikov-de Haas and Aharonov Bohm effects in a graphene nanoring structure

Journal

APPLIED PHYSICS LETTERS
Volume 96, Issue 14, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.3380616

Keywords

Aharonov-Bohm effect; electronic density of states; graphene; Landau levels; magnetoresistance; nanostructured materials

Funding

  1. BK21 Frontier Physics Research Division
  2. GPP [GPPK 0543-20090017]
  3. NRF, Korea [0543-20090091477]
  4. Korean Ministry of Education, Science and Technology (MEST) [R32-2008-000-10082-0]

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We observed the Shubnikov-de Haas and the Aharonov Bohm oscillations in a graphene nanoring structure of 1 mu m in diameter and with a 125 nm channel width. We found a separation of 2 Delta V-g=17.5 V between electron and hole Landau levels in the plot of longitudinal resistance as a function of gate voltage and magnetic field. This separation can be understood as a result of the transport gap, Delta V-t=20 V, in the density of state. The Aharonov Bohm effect was observed in magnetoconductance with poor visibility because of the short phase coherence length of the graphene nanoring structure.

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