Journal
APPLIED PHYSICS LETTERS
Volume 96, Issue 17, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3416912
Keywords
ab initio calculations; defect states; dielectric materials; energy gap; hafnium compounds; high-k dielectric thin films; internal stresses; MOSFET; percolation; random noise; semiconductor device breakdown; semiconductor device noise; vacancies (crystal)
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Funding
- Ministry of Education (MOE), Singapore [T206B1205]
- School of EEE, Nanyang Technological University
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We study the influence of multiple oxygen vacancy traps in the percolated dielectric on the postbreakdown random telegraph noise (RTN) digital fluctuations in HfO2-based metal-oxide-semiconductor transistors. Our electrical characterization results indicate that these digital fluctuations are triggered only beyond a certain gate stress voltage. First-principles calculations suggest the oxygen vacancies to be responsible for the formation of a subband in the forbidden band gap region, which affects the triggering voltage (V-TRIG) for the RTN fluctuations and leads to a shrinkage of the HfO2 band gap.
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