Analysis of Raman lasing characteristics in silicon-on-insulator waveguides

Numerical analysis predicts that continuous-wave Raman lasing is possible in silicon-on-insulator (SOI) waveguides, in spite of the detrimental presence of two-photon absorption and free-carrier absorption. We discuss in particular the dependence of the lasing characteristics of SOI Raman lasers on the effective lifetime of the free carriers generated by two-photon absorption. It is shown that the pump-power-dependent cavity losses lead to a rollover of the output-power characteristics at a certain pump-power level and that there exists an upper shutdown threshold at which the laser operation breaks down. (C) 2004 Optical Society of America.