Journal
APPLIED PHYSICS LETTERS
Volume 96, Issue 7, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3327834
Keywords
core levels; hafnium compounds; heat treatment; high-k dielectric thin films; plasma materials processing; semiconductor heterojunctions; semiconductor-insulator boundaries; spectral line shift; sputter deposition; surface chemistry; thermal stability; X-ray photoelectron spectra
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High quality HfO2 dielectrics have been grown on epitaxial graphene on 4H-SiC substrates and have been studied by using in situ x-ray photoemission spectroscopy. The in situ thermal treatment shows that the HfO2/graphene/4H-SiC heterojunctions have good thermal stability up to 650 degrees C. A shift of core-level spectra from graphene layer implies that charge transfer takes place at the interface. The high thermal stability and sufficient barrier heights between HfO2 and graphene indicate that high-k dielectric grown on graphene is very promising for the development of graphene-based electronic devices.
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