Related references
Note: Only part of the references are listed.Electric-field control of tunneling magnetoresistance effect in a Ni/InAs/Ni quantum-dot spin valve
K. Hamaya et al.
APPLIED PHYSICS LETTERS (2007)
Spin transport through a single self-assembled InAs quantum dot with ferromagnetic leads
K. Hamaya et al.
APPLIED PHYSICS LETTERS (2007)
Molecular three-terminal devices: fabrication and measurements
HSJ van der Zant et al.
FARADAY DISCUSSIONS (2006)
Temperature control of electromigration to form gold nanogap junctions
G Esen et al.
APPLIED PHYSICS LETTERS (2005)
Lateral electron transport through single self-assembled InAs quantum dots
M Jung et al.
APPLIED PHYSICS LETTERS (2005)
Metal-nanoparticle single-electron transistors fabricated using electromigration
KI Bolotin et al.
APPLIED PHYSICS LETTERS (2004)
Theory of transport through quantum-dot spin valves in the weak-coupling regime -: art. no. 195345
M Braun et al.
PHYSICAL REVIEW B (2004)
Observation of current staircase due to large quantum level spacing in a silicon single-electron transistor with low parasitic series resistance
M Saitoh et al.
JOURNAL OF APPLIED PHYSICS (2002)
Doped silicon single electron transistors with single island characteristics
R Augke et al.
APPLIED PHYSICS LETTERS (2000)
Aluminum single electron transistors with islands isolated from the substrate
VA Krupenin et al.
JOURNAL OF LOW TEMPERATURE PHYSICS (2000)
Share Paper
