Magnetoresistance characterization of nanometer Si metal-oxide-semiconductor transistors

We report on the high-field (up to 10 T) magnetoresistance measurements performed on the short (down to 75-nm gate length) n-type Si metal-oxide-semiconductor field-effect transistors. The electron magnetoresistance mobility of these nanometer devices was determined for a wide range of the electron concentration (10(7)-10(13) cm(-2), i.e., from a weak to a strong inversion) and gate length (10 mum-75 nm). In the case of long samples, the magnetoresistance mobility was compared to the effective mobility obtained by the standard parameter extraction and the split C-V techniques. The results are discussed in terms of the scattering power-law two-dimensional transport analysis. The data clearly indicate a significant decrease of the mobility with the gate length reduction below 100 nm. (C) 2004 American Institute of Physics.