Journal
APPLIED PHYSICS LETTERS
Volume 96, Issue 12, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3371812
Keywords
electron capture; gallium compounds; indium compounds; light emitting diodes; semiconductor doping; semiconductor quantum wells
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Funding
- Sandia's Solid-State Lighting Science Center
- U.S. Department of Energy [DE-AC04-94AL85000]
- Sandia Corporation
- Lockheed Martin Co.
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The confinement of electrons to the active region of GaInN light-emitting diodes (LEDs) is limited by the (i) inefficient electron capture into polar quantum wells, (ii) electron-attracting properties of electron-blocking layers (EBL), (iii) asymmetry in electron and hole transport, and (iv) unfavorable p-doping in the EBL for high Al content. To counteract these mechanisms, we employ tailored Si-doping in the quantum barriers (QBs). Experiments show a 37.5% enhancement in light-output power at high currents of one-QB-doped LEDs over all-QB-doped LEDs. These results are consistent with simulations showing that QB doping can be used to symmetrize the electron and hole distribution.
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