Journal
APPLIED PHYSICS LETTERS
Volume 96, Issue 12, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3361656
Keywords
antimony compounds; crystal structure; crystallisation; germanium compounds; laser beam effects; phase change materials; precipitation (physical chemistry); Raman spectra; thin films
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Funding
- U.S. Department of Energy [DE-AC02-98CH10886]
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The stability of the crystalline phase of binary phase-change Ge(x)Sb(1-x) films is investigated over a wide range of Ge content. From Raman spectroscopy we find the Ge-Sb crystalline structure irreversibly altered after exposure to a laser beam. We show that with increasing beam intensity/temperature Ge agglomerates and precipitates out in the amount growing with x. A simple empirical relation links Ge precipitation temperature T(Ge)(p) to the rate of change dT(cryst)/dx of crystallization, with the precipitation easiest on the mid-range x plateau, where T(cryst) is nearly constant. Our findings point to a preferable 15%less than or similar to x less than or similar to 50% window, that may achieve the desired cycling/archival properties of a phase-change cell.
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