Journal
APPLIED PHYSICS LETTERS
Volume 96, Issue 11, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3353972
Keywords
Ge-Si alloys; Hall effect; membranes; nanowires; self-assembly; semiconductor quantum wires; surface energy; surface structure
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Funding
- DOE [DE-FG02-03ER46027, DE-FG02-03ER46028]
- NSF/MRSEC [DMR-0520527]
- AFOSR/MURI [FA9550-08-10337]
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SiGe nanomembranes and nanowires provide one important class of stretchable electronic materials. We have investigated a very interesting wiggling phenomenon of SiGe nanoribbons bonded to Si substrate as experimentally observed in a Hall-bar structure. Based on continuum linear stability analysis, we establish a scaling rule between the wiggling period and surface bonding area, in relation to the ratio of strain energy over the interfacial bonding energy.
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