Journal
APPLIED PHYSICS LETTERS
Volume 96, Issue 2, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3291066
Keywords
gallium arsenide; hot carriers; III-V semiconductors; iron; spin polarised transport
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Funding
- Nakajima Foundation
- Cambridge Overseas Trust
- Overseas Research Studentships
- EPSRC [EP/F0224045/1]
- EPSRC [EP/F024045/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [EP/F024045/1] Funding Source: researchfish
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Spin-dependent transport for photoexcited electrons in an epitaxial Fe/GaAs interface was characterized from 5 to 300 K. The presence of spin-dependent transport was confirmed at all the measured temperatures and the spin polarization across the interface is found to increase with decreasing temperature. A time-of-flight-type model based on the Dyakonov-Perel (DP) spin relaxation mechanism was employed to explain the temperature dependence, providing that the estimated spin relaxation time in GaAs is 62 ps at 5 K. This short spin relaxation time can be explained by the stronger efficiency of the DP mechanism for hot-electrons.
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