Journal
APPLIED PHYSICS LETTERS
Volume 96, Issue 1, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3282799
Keywords
charge injection; electroluminescence; gallium arsenide; gallium compounds; III-V semiconductors; iron; light emitting diodes; MIS devices; spin polarised transport; tunnel diodes; tunnelling
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Funding
- Priority Area of Creation and Control of Spin Current [2042011]
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We examined the electrical injection of spin-polarized electrons into a GaAs-based light-emitting diode structure from a Fe/GaOx tunnel injector whose electron-charge injection efficiency was comparable to that of a conventional Fe/n(+)-AlGaAs ohmic injector. A high circular polarization of electroluminescence up to 20% was observed at 2 K. The combination of effective spin-and charge-injection efficiencies makes GaOx a promising tunnel barrier for GaAs-based spintronic devices.
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