4.6 Article

Unipolar resistive switching effect in YMn1-δO3 thin films

Journal

APPLIED PHYSICS LETTERS
Volume 96, Issue 1, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.3280380

Keywords

electric resistance; ferroelectric materials; ferroelectric switching; fracture; insulating thin films; MIM structures; platinum; Poole-Frenkel effect; yttrium compounds

Funding

  1. Natural Science Foundation of China [50832002, 10874075]
  2. National Key Projects for Basic Researches of China [2006CB921802, 2009CB623303]
  3. Jiangsu Province, China [BK2008024]

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Steady unipolar resistive switching of Pt/YMn1-delta O3/Pt MIM structure is investigated. High resistance ratio (>10(4)) of high resistance state (HRS) over low resistance state (LRS) and long retention (>10(5) s) are achieved. It is suggested that the Joule heating and Poole-Frenkel effect dominate respectively the conduction of the LRS and HRS in high electric field region. The resistive switching is explained by the rupture and formation of conductive filaments in association with the local Joule-heat-induced redox inside YMn1-delta O3.

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