Journal
APPLIED PHYSICS LETTERS
Volume 96, Issue 3, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3285180
Keywords
aluminium compounds; gallium arsenide; high-frequency effects; III-V semiconductors; quantum point contacts; semiconductor heterojunctions; semiconductor quantum dots; tunnelling
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Funding
- Ministry of Internal Affairs and Communications of Japan
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We propose and demonstrate wide-band capacitance measurements on a semiconductor double quantum dot (DQD) to study tunneling dynamics. By applying phase-tunable high-frequency signals independently to the DQD and a nearby quantum-point-contact charge detector, we successfully measure current proportional to the capacitance associated with the single-electron motion over a wide frequency range from Hz to a few tens of GHz. Analyzing the phase and the frequency dependence of the signal allows us to extract the characteristic tunneling rates. We show that, by applying this technique to the interdot tunnel coupling regime, quantum capacitance reflecting the strength of the quantum-mechanical coupling can be measured.
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