Journal
APPLIED PHYSICS LETTERS
Volume 97, Issue 20, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3518491
Keywords
-
Categories
Funding
- Swiss National Science Foundation [200020-119733/1]
- Swiss National Science Foundation (SNF) [200020_119733] Funding Source: Swiss National Science Foundation (SNF)
Ask authors/readers for more resources
The stability of oxygen vacancies across the Ge-HfO2 interface is studied through semilocal and hybrid density-functional calculations. On the semiconductor side, the formation energies are obtained for substoichiometric GeOx of varying x through the use of a bond-energy model. On the hafnium oxide side, the interface is modeled through bulk models with aligned band structures. Formation energies are compared for different charge states and Fermi energy levels. The oxygen vacancy is found to be most stable in the interfacial germanium oxide layer for both p-type and n-type doping. This favors the formation of substoichiometric GeOx, consistent with experimental observations. (C) 2010 American Institute of Physics. [doi:10.1063/1.3518491]
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available