Journal
APPLIED PHYSICS LETTERS
Volume 96, Issue 2, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3291053
Keywords
doping; epitaxial layers; ground states; metal-insulator transition; phase diagrams; phase separation; tungsten; vanadium compounds
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We have fabricated epitaxial V1-xWxO2(0 < x < 0.33) thin films on TiO2 (001) substrates. The metal-insulator transition temperature of VO2 is systematically reduced by W doping, and eventually a metallic ground state is realized at 0.08 < x < 0.09. Tiny resistivity upturn around 50 K observed for these films suggests an electronic phase separation between a majority metallic matrix and minority insulating puddles. With further increasing x above 0.095, another insulating phase appears while increasing the metal-insulator transition temperature. The elucidated phase diagram gives basic knowledge for devices based on Mott transition.
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