Journal
APPLIED PHYSICS LETTERS
Volume 96, Issue 5, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3306737
Keywords
arsenic compounds; avalanche photodiodes; electrical conductivity; energy gap; hot carriers; impact ionisation; indium compounds; narrow band gap semiconductors; semimagnetic semiconductors
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Funding
- Engineering and Physical Sciences Research Council
- Royal Society
- EPSRC [EP/G000190/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [EP/D500222/1, EP/G000190/1] Funding Source: researchfish
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We report an experimental study of hot electron dynamics in the narrow band gap dilute nitride alloy, InAs1-xNx, with x up to 0.6%. The sharp increase in the conductivity of n-type InAs1-xNx at applied electric fields above 1 kV/cm demonstrates that impact ionization dominates the hot electron dynamics. This observation, combined with the reduction in the band gap energy by the N-atoms, suggest prospects for the use of this narrow gap alloy in infrared avalanche photodiodes.
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