Journal
APPLIED PHYSICS LETTERS
Volume 96, Issue 5, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3294328
Keywords
amorphous state; annealing; conduction bands; crystallisation; elemental semiconductors; energy gap; interface states; magnesium compounds; photoemission; silicon; valence bands
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Funding
- Fonds Wetenschappelijk Onderzoek (FWO)-Vlaanderen [1.5.057.07]
- Science Foundation Ireland (SFI) [07/SRC/I1172]
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The electron energy band diagram at the (100)Si/MgO interface is characterized using internal photoemission of electrons and holes from Si into the oxide. For the as-deposited amorphous MgO the interface barriers correspond to a band gap width of 6.1 eV, i.e., much lower than the conventionally assumed bulk crystal value (7.83 eV). The annealing-induced crystallization of MgO mostly affects the energy of the valence band while the conduction band bottom retains its energy position at 3.37 +/- 0.05 eV above the top of the silicon valence band.
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