Journal
APPLIED PHYSICS LETTERS
Volume 96, Issue 2, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3292217
Keywords
alumina; current density; dielectric thin films; interface states; leakage currents; MIS capacitors; multilayers; niobium compounds; oxidation; permittivity; platinum; sandwich structures; titanium compounds; transmission electron microscopy; valence bands; X-ray diffraction; X-ray photoelectron spectra; X-ray reflection
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Funding
- NSF [10775166]
- Zhejiang Province STF [2008C31002]
- Wenzou STF [G20060099]
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Al2O3/NbAlO/Al2O3 sandwich dielectric films were grown on InP substrate and annealed. X-ray reflectivity measurements suggested that 1.0 nm interfacial layer existed at InP interface, x-ray diffraction and high resolution transmission electron microscopy indicated the films were crystallized. X-ray photoelectron spectra indicated the oxidization of InP substrate, and the valence-band offset between the dielectric film and InP interface was calculated to be 3.1 eV. The electrical measurements indicated that the leakage current density was 40 mA/cm(2) at gate bias of 1 V, and the equivalent oxide thickness and the dielectric constant were 1.7 and 20 nm, respectively.
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