Journal
APPLIED PHYSICS LETTERS
Volume 96, Issue 2, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3277146
Keywords
Curie temperature; ferromagnetic materials; gallium arsenide; III-V semiconductors; manganese compounds; MISFET; semimagnetic semiconductors
Categories
Funding
- MEXT/JSPS
- GCOE Program at Tohoku University
- Grants-in-Aid for Scientific Research [21224009] Funding Source: KAKEN
Ask authors/readers for more resources
The authors have fabricated electric double layer transistors with a (Ga,Mn)As channel to investigate the possibility of larger modulation of magnetism by the application of electric fields. The sheet conductance as well as the Curie temperature can be modulated up to a few tens of percents by application of gate voltage of a few volts, which is almost one-order of magnitude smaller than that required in conventional metal-insulator-semiconductor structures. The 14 K modulation of the Curie temperature by applying gate voltage ranging from -1 to 3 V is the highest modulation ratio reported so far in ferromagnetic semiconductors.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available