High-performance transparent thin-film transistor based on Y2O3/In2O3 with low interface traps

High-performance Y2O3/In2O3-based transparent thin-film transistors were processed featuring low thermal budget. The device shows a field-effect mobility of 43.5 cm(2) V-1 s(-1), a subthreshold swing of 0.28 V/decade, and an on/off current ratio of 10(8). These results are attributed to the high dielectric constant of Y2O3 and unique electronic structure of In2O3. Furthermore, the cubic phases of crystalline Y2O3 and In2O3 films have the identical crystal structure with a small lattice mismatch, which provides a well-defined dielectric/semiconductor interface for the optimal performance. (C) 2010 American Institute of Physics. [doi:10.1063/1.3492852]