Low-power write-once-read-many-times memory devices

We introduce low-power write-once-read-many-times memory devices fabricated from solution. These devices are based on an electron-only structure using colloidal ZnO semiconductor nanoparticles and the doped conjugated polymer polyethylenedioxythiophene doped with polystyrene sulfonic acid (PEDOT:PSS). The conductive p-doped conjugated polymer is permanently dedoped by injected electrons, producing an insulating state. This demonstration provides a class of memory devices with the potential for extremely low-cost, low-power-consumption applications, such as radio-frequency identification tags. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3473775]