Journal
APPLIED PHYSICS LETTERS
Volume 96, Issue 9, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3339873
Keywords
antimony; band structure; charge exchange; electrical conductivity; elemental semiconductors; II-VI semiconductors; nanobelts; semiconductor devices; semiconductor heterojunctions; silicon; silicon compounds; wide band gap semiconductors; zinc compounds
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Funding
- Major Project of International Cooperation and Exchanges [50620120439, 2006DFB51000]
- National Basic Research Program of China [2007CB936201]
- National Natural Science Foundation of China [10876001]
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We report the electrical bistability and negative differential resistance (NDR) in single Sb-doped ZnO nanobelts/SiOx/p-type Si heterostructured devices. The current-voltage (I-V) characteristics of the devices were discussed in terms of the energy band diagram of the devices. The origin of the electrical bistability and NDR is suggested to be associated with the electric-field-induced charge transfer. The performance of the fabricated devices can be enhanced under the ultraviolet light illumination.
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