Efficient growth of high-quality graphene films on Cu foils by ambient pressure chemical vapor deposition

We developed an ambient pressure chemical vapor deposition (CVD) for rapid growth of high-quality graphene films on Cu foils. The quality and growth rate of graphene films are dramatically increased with decreasing H-2 concentration. Without the presence of H-2, continuous graphene films are obtained with a mean sheet resistance of < 350 Omega/sq and light transmittance of 96.3% at 550 nm. Because of the ambient pressure, rapid growth rate, absence of H-2 and readily available Cu foils, this CVD process enables inexpensive and high-throughput growth of high-quality graphene films. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3512865]