Diodes with breakdown voltages enhanced by the metal-insulator transition of LaAlO3-SrTiO3 interfaces

Using the metal-insulator transition that takes place as a function of carrier density at the LaAlO3-SrTiO3 interface, oxide diodes have been fabricated with room-temperature breakdown voltages of up to 200 V. With applied voltage, the capacitance of the diodes changes by a factor of 150. The diodes are robust and operate at temperatures up to 270 C. (C) 2010 American Institute of Physics. [doi:10.1063/1.3428433]