Journal
APPLIED PHYSICS LETTERS
Volume 96, Issue 26, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3457864
Keywords
crystallisation; elemental semiconductors; germanium; multilayers; nanostructured materials; oxidation; silicon compounds; sputter deposition; substrates
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Funding
- Australian Research Council (ARC) via its Centers of Excellence
- Global Climate and Energy Project (GCEP)
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A simple and silicon process-compatible technique is reported for the synthesis of Ge nanocrystals (Ge-ncs) at low temperatures below 400 degrees C, which is much lower than the typical growth temperatures. The Ge-ncs were found to form only within a temperature window between 350 and 420 degrees C. The underlying mechanism has been explained by a competitive process between Volmer-Weber growth and oxidation reaction. We further implemented this technique in the fabrication of multilayered Ge-ncs which exhibited controllable crystallite size with high crystallization quality. The low temperature technique developed in this work would allow production of Ge-ncs and relative devices on low cost substrates, such as glass. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3457864]
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