Journal
JOURNAL OF ALLOYS AND COMPOUNDS
Volume 382, Issue 1-2, Pages 100-106Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2004.05.036
Keywords
semiconductors; crystal structure and symmetry; X-ray diffraction; aluminium nitride; gallium nitride; powder diffraction; lattice parameter; structure refinement; Rietveld method
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Powder diffraction data for fine AIN and GaN powders were collected at a Bragg-Brentano diffractometer equipped with a Johansson monochromator and a semiconductor strip detector. Rietveld-refinements were performed in order to determine the structural parameters of these wurtzite-type (space group, P6(3)mc) materials. The following crystallographic data were obtained: a = 3.11197(2)Angstrom, c = 4.98089(4)Angstrom, cla = 1.60056(2), u = 0.3869(5) for aluminium nitride and a = 3.28940(l) Angstrom, c = 5.18614(2) Angstrom, cla = 1.62606(l), u = 0.3789(5) for gallium nitride. These structural data are discussed in the light of earlier experimental and theoretical results. (C) 2004 Elsevier B.V. All rights reserved.
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