Journal
APPLIED PHYSICS LETTERS
Volume 96, Issue 4, Pages -Publisher
AIP Publishing
DOI: 10.1063/1.3294635
Keywords
arsenic; Curie temperature; deep levels; dilute magnetic materials; ferromagnetic materials; g-factor; II-VI semiconductors; impurity states; magnetic hysteresis; magnetic semiconductors; wide band gap semiconductors; zinc compounds
Categories
Funding
- Korea government of Ministry of Education, Science, and Technology (MEST) [NRF-20090063543]
Ask authors/readers for more resources
Enhanced ferromagnetism was observed from the H2O2-treated p-type (Zn0.93Mn0.07)O:As layer. Compared with the untreated sample, the H2O2-treated sample showed the enlarged ferromagnetic hysteresis loop with approximately two-times-increased spontaneous magnetization. And also, in comparison with the untreated sample (T-C similar to 280 K), the H2O2-treated sample exhibited to have the increased T-C persisting up to above 350 K. These results were confirmed to originate from the enhanced p-d hybridization due to the decrease in negatively charged residual background carriers. This is because the increased effective g-factor resulting from the decrease in oxygen-related defects acting as native deep donors was observed from the H2O2-treated sample.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
