Journal
APPLIED PHYSICS LETTERS
Volume 97, Issue 18, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3511768
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Funding
- National Natural Science Foundation of China [60990313, 10774001, 60806042, 60736033]
- National Basic Research Program of China [2006CB604908, 2006CB921607]
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The spin splitting in GaN-based heterostructures has been investigated by means of circular photogalvanic effect experiments under uniaxial strain. The ratios of Rashba and Dresselhaus spin-orbit coupling coefficients (R/D ratios) have been measured in AlxGa1-xN/GaN heterostructures with various Al compositions. It is found that the R/D ratio increases from 4.1 to 19.8 with the Al composition of the AlxGa1-xN barrier varied from 15% to 36%. The Dresselhaus coefficient of bulk GaN is experimentally obtained to be 0.4 eV angstrom(3). The results indicate that the spin splitting in GaN-based heterostructures can be modulated effectively by the polarization-induced electric fields. (C) 2010 American Institute of Physics. [doi:10.1063/1.3511768]
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